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Cu low k interconnection¿¡¼­ÀÇ Cu »êÈ­¹æÁö¸·¿¡ ´ëÇÑ ¿¬±¸

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¼Ò°³±Û Cu low k interconnection¿¡¼­ Cu oxidation ¹× corrosion ¹æÁö¸¦ À§ÇÑ inhibition layer¿¡ ´ëÇÑ ¿¬±¸. º» ¿¬±¸¿¡¼­´Â inhibition layer·Î¼­ Ni/Au ¹«ÀüÇØ µµ±ÝÃþ°ú Self-assembled monolayer¿¡ ´ëÇÑ Æò°¡ ÁøÇàÇÔ.
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º»¹®³»¿ë *Project Excutive Summary
ENIG electroplating process condition optimization
Self-assembled monolayer treatment condition optimization
Assembly process & productivity
Function sample & internal reliability


*Summary
ElectrolessNi/Au evaluation as inhibition layer for Cu oxidation, corrosion and adhesion layer.
􀂙ENIG -Function sample / process qualification / reliability test pass.
&#******-*******;confirm possible process window
􀂙Patent -patent map, US patent about SAM treatment material
􀂙Competitor benchmarking
􀂙Estimation of cost reductionResult
􀂙Mass production evaluation
􀂙Pad structure modification
􀂙Fuse corrosion evaluationFuture workJo EunUniversity
Âü°íÀÚ·á Wire bonding to advanced copper low k IC, metal / dielectric stacks, and materials considerations _George Harman, NIST
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