| 1. Cu low k interconnection¿¡¼ ±¸¸® »êÈ ¹æÁö¸·..
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| Why Cu / low-k interconnection ? High density / high speed device¿¡´ëÇѽÃÀåÀǿ䱸 Device generation (design rule) ¹Ì¼¼È->gate delay °¨¼Ò, but RC delay Áõ°¡ Power dissipation, Cross talk ->BEOL process issue ¹ß»ýÇÔ. ITRS roa.. | |||
| ÅÂ±× : Cu BEOL, Cu interconnection, Cu low k, ENIG, self assembled monol | |||
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| 2. Â÷¼¼´ë ÀúÀåÀåÄ¡ SSDÀÇ ÀÛµ¿¿ø¸®, application, ..
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| Disk drive definitions; HDD, HHD, SSD Hard disk drives (HDD) Magnetic recording°úplayback ±â¼úÀ»ÀÌ¿ë. Primary data storage·Î¼laptop, desktop, server µî¿¡»ç¿ëµÊ Hybrid disk drives (HHD) Standard HDD¿¡large buffer·Î¼flash m.. | |||
| ÅÂ±× : ssd, solid state drive, solid state disk, hhd, Â÷¼¼´ë ÀúÀåÀåÄ¡ | |||
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| 3. Cu low k interconnection¿¡¼ÀÇ Cu »êȹæÁö¸·¿¡..
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| *Project Excutive Summary ENIG electroplating process condition optimization Self-assembled monolayer treatment condition optimization Assembly process & productivity Function sample & internal reliability *Summary ElectrolessNi/Au evaluation as inh.. | |||
| ÅÂ±× : Cu low k interconnec, low k, Cu BEOL, Cu interconnect, wire bonding | |||
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| 4. À¯ÇÐ¿ë ¿µ¹® Ãßõ¼ (Letter of recommendation)
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| 5. Æ÷Ç×°ø´ë ´ëÇпø °úÁ¤ ¿¬±¸ °èȹ ¹× Àڱ⠼Ұ³¼
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| Çкο¡¼ material science¿¡ ´ëÇÑ Àü¹ÝÀûÀÎ ÇнÀÀ» ÅëÇØ, Àü°ø¿¡ ´ëÇÑ ±âÃÊ Áö½ÄÀ» ÀÍÇû°í, Á¹¾÷ ÈÄ ¹ÝµµÃ¼ ȸ»ç¿¡¼ packaging °øÁ¤ °³¹ß ¾÷¹«¸¦ ÇÏ¸é¼ ÇкΠ°úÁ¤¿¡¼ ¾òÁö ¸øÇß´ø ¹ÝµµÃ¼ °øÁ¤ Àü¹Ý¿¡ ´ëÇÑ Áö½Ä°ú °³¹ß process¿¡ ´ëÇÑ ÀÌÇØ µî ¸¹Àº °æÇèÀ» ¾ò¾ú´Ù. ¶Ç.. | |||
| ÅÂ±× : ´ëÇпø ¿¬±¸ °èȹ¼, Àڱ⠼Ұ³¼, ¿¬±¸ °èȹ ¹× Àڱ⠼Ò, Æ÷Ç×°ø´ë, ½Å¼ÒÀç°øÇкΠ| |||
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| 6. À¯ÇÐ¿ë ±³¼ö Ãßõ¼ (Letter of recommendation)
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| 7. [°¨»ó¹®]À̰ÇÈñ °³Çõ 10³â
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| ÀÌ Ã¥ÀÇ ¸Ó¸®¸»Àº ¡®»ï¼º ½Å°æ¿µ, ¾ÆÁ÷ ³¡³ªÁö ¾Ê¾Ò´Ù.¡¯ÀÌ´Ù. »ï¼ºÀÇ °³Çõ ÀÛ¾÷ÀÇ ½ÃÀÛÀº Áö³ 1993³â 6¿ù À̸¥¹Ù ¡®ÇÁ¶ûũǪ¸£Æ® ¼±¾ð¡¯À¸·Î ½ÃÀ۵Ǿú°í °³ÇõÀÇ ¸·ÀÌ ¿Ã¶ú´Ù°í º¼ ¼ö ÀÖ´Ù. ´ç½Ã »ï¼ºÀüÀÚ´Â ±¹³»¿¡¼ ±Ý¼º»ç¿Í Ä¡¿ÇÑ °æÀïÀ» ¹ú¿´´ø °¡ÀüºÎ¹®ÀÇ ÈĹ߾÷ü¿´Áö¸¸.. | |||
| ÅÂ±× : À̰ÇÈñ, °³Çõ, 10³â, »ï¼º, ÀÔ»ç Àü ±³À° | |||
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| 8. [½ÃÀå°æÁ¦]½ÃÀå°æÁ¦ÀÇ ¿ø¸®¿Í ±â¾÷ÀÇ ¿ªÇÒ
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| Áö±Ý±îÁö ÀϹÝÀûÀÎ °æÁ¦ÇÐÀûÀÎ Àǹ̿¡¼ °æÁ¦ ¼ºÀåÀ» ÀÌ·ç±â À§ÇØ ÇÊ¿äÇÑ °Íµé°ú ±â¾÷ÀÇ ÀÌÀ±Ãß±¸ ³ë·ÂÀÌ °æÁ¦ ¼ºÀå°ú ¾î¶² °ü°è°¡ ÀÖ´ÂÁö¸¦ »ìÆìº¸¾Ò´Ù. Áö±ÝºÎÅÍ´Â Çѱ¹ °æÁ¦ÀÇ ¼Òµæ 2¸¸ºÒ ´Þ¼ºÀ» À§ÇØ ÇÊ¿äÇÑ ¿ì¸®ÀÇ °úÁ¦¿¡ ´ëÇØ¼ ¾Ë¾Æº¸ÀÚ. ¿ì¼± Çѱ¹ °æÁ¦ÀÇ ¼Òµæ 2¸¸ºÒ .. | |||
| ÅÂ±× : ½ÃÀå °æÁ¦, 7000¸¸, ¹Ì¼Ç 20000, »ï¼º ÀÔ»çÀü ±³À°, »ï¼º | |||
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| 9. [¹ÝµµÃ¼ °øÁ¤] ¹ÝµµÃ¼°øÁ¤ Áß oxidation½ÇÇè
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| 2) ¹ÝµµÃ¼ °øÁ¤ Áß OxidationÀÇ »ç¿ë ºÐ¾ß ¹× ÀÀ¿ë ¹æ¹ý »êÈ(Oxidation)ÀÇ ¼¼°¡Áö ÁÖ¿ä ±â´ÉÀº Ç¥¸éº¸È£, È®»ê ¸¶½ºÅ·, À¯Àüü ÀÌ´Ù. ù ¹øÂ°·Î Ç¥¸é º¸È£´Â ½Ç¸®ÄÜÀÇ ºñÀúÇ×°ú Àüµµµµ´Â 0.001%ÀÇ dopant·Îµµ º¯ÈÇÑ´Ù. ±×·±µ¥ °øÁ¤ Áß¿¡ »ý±ä ¿À¿°À¸·Î ÀÎÇØ ÀúÇ×°ú ÀüµµÀÇ Çü.. | |||
| ÅÂ±× : oxidation, »êȽÇÇè, ¹ÝµµÃ¼ °øÁ¤ | |||
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| 10. [¹ÝµµÃ¼ °øÇÐ] ³ª³ë Ŭ·¯½ºÅ͸¦ ÀÌ¿ëÇÑ ÄÝ·ÎÀ̵å ..
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| Si nanoparticlesÀÇ Á¦Á¶¹ý Si nanoparticleÀ» Á¦Á¶ÇÏ´Â ¹æ¹ýÀº physicalÇÑ ¹æ¹ý°ú Wet chemicalÇÑ ¹æ¹ýÀ¸·Î ³ª´ ¼ö ÀÖ´Ù. PhysicalÇÑ ¹æ¹ýÀ¸·Î´Â ion implantation°ú PECVD, sputtering µîÀÇ ¹æ¹ýÀÌ ÀÖ´Ù. wet chemicalÇÑ ¹æ¹ýÀ¸·Î´Â electrochemicalÇÑ ¹æ¹ý°ú aerosol proce.. | |||
| ÅÂ±× : ÄÝ·ÎÀÌµå ¹ÝµµÃ¼, ±¤Ã˸Å, Quantum dot | |||
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